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SP8J5
Transistors
4V Drive Pch+Pch MOS FET
SP8J5
Structure Silicon P-channel MOS FET External dimensions (Unit : mm)
SOP8
5.0
0.4
1.75
(5)
1pin mark
1.27
0.2
Each lead has same dimensions
Applications Power switching, DC-DC converter
Packaging specifications
Package Type SP8J5 Code Basic ordering unit (pieces) Taping TB 2500
Inner circuit
(8) (7)
(6) (5)
2
2
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain
1
1
(1)
(2)
(3)
(4)
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current
Source current (Body diode)
1 ESD PROTECTION DIODE 2 BODY DIODE
Continuous Pulsed Continuous Pulsed
Total power dissipation Channel temperature Range of Storage temperature
1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board
Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD 2 Tch Tstg
Limits -30 20 7.0 28 -1.6 -28 2.0 150 -55 to +150
Unit V V A A A A W C C
Thermal resistance
Parameter Channel to ambient
Mounted on a ceramic board.
Symbol Rth(ch-a)
Limits
62.5
Unit C / W
Rev.A
0.4Min.
Features 1) Low On-resistance. (25m at 4.5V) 2) High Power Package. (PD=2.0W) 3) High speed switching. 4) Low voltage drive. (4V)
(8)
(1)
(4)
3.9 6.0
1/4
SP8J5
Transistors
Electrical characteristics (Ta=25C)
Parameter Symbol Min. IGSS Gate-source leakage - Drain-source breakdown voltage V(BR) DSS -30 IDSS Zero gate voltage drain current - VGS (th) -1.0 Gate threshold voltage - Static drain-source on-state RDS (on) - resistance - Yfs 6.0 Forward transfer admittance Ciss - Input capacitance Coss Output capacitance - Reverse transfer capacitance - Crss Turn-on delay time - td (on) Rise time - tr Turn-off delay time - td (off) Fall time - tf Total gate charge - Qg Gate-source charge - Qgs Gate-drain charge Qgd -
Pulsed
Typ.
- - - - 20 25 30 - 2600 450 350 20 50 110 70 25 5.5 10
Max.
10 - -1 -2.5 28 35 42 - - - - - - - - - - -
Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC
Conditions
VGS=20V, VDS=0V ID= -1mA, VGS=0V VDS= -30V, VGS=0V VDS= -10V, ID= -1mA ID= -7A, VGS= -10V ID= -3.5A, VGS= -4.5V ID= -3.5A, VGS= -4.0V VDS= -10V, ID= -3.5A VDS= -10V VGS=0V f=1MHz ID= -3.5A VDD -15V VGS= -10V RL=4.3 RG=10 VDD -15V VGS= -5V ID= -7A
Body diode characteristics (Source-drain) (Ta=25C)
Parameter Forward voltage Symbol VSD Min. - Typ. - Max. -1.2 Unit V Conditions IS= -1.6A, VGS=0V
Rev.A
2/4
SP8J5
Transistors
Electrical characteristic curves
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
10 VDS= -10V Pulsed
Ta=125C Ta=75C Ta=25C Ta= -25C
1000 Ta=25C Pulsed
100
VGS= -10V Pulsed
DRAIN CURRENT : -ID (A)
1
100
VGS= -4V VGS= -4.5V VGS= -10V
0.1
10
10
0.01
Ta=125C Ta=75C Ta=25C Ta= -25C
0.001 1.0
1.5
2.0
2.5
3.0
1 0.1
1
10
1 0.1
1
10
GATE-SOURCE VOLTAGE : -VGS (V)
DRAIN CURRENT : -ID (A)
DRAIN CURRENT : -ID (A)
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State Resistance vs. Drain Current
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
1000
REVERSE DRAIN CURRNT : -IDR (A)
VGS= -4.5V Pulsed
1000
VGS= -4V Pulsed
10
Ta=125C Ta=75C Ta=25C Ta= -25C
VGS=0V Pulsed
1
100
Ta=125C Ta=75C Ta=25C Ta= -25C
100
Ta=125C Ta=75C Ta=25C Ta= -25C
0.1
10 0.1
1
10
10 0.1
1
10
0.01 0.0
0.5
1.0
1.5
DRAIN CURRENT : -ID (A)
DRAIN CURRENT : -ID (A)
SOURCE-DRAIN VOLTAGE : -VSD (V)
Fig.4 Static Drain-Source On-State vs. Drain Current
Fig.5 Static Drain-Source On-State vs. Drain Current
Fig.6 Reverse Drain Current Source-Drain Current
10000
10000
GATE-SOURCE VOLTAGE : -VGS (V)
SWITCHING TIME : t (ns)
Ta=25C f=1MHz VGS=0V
CAPACITANCE : C (pF)
1000
Ciss
1000
tf td (off)
Ta=25C VDD= -15V VGS= -10V RG=10 Pulsed
8 7 6 5 4 3 2 1 0 0 5 10 15 20
Ta=25C VDD= -15V ID= -7A RG=10 Pulsed
100
tr
10
Coss Crss
100 0.01
td (on)
0.1
1
10
100
1 0.01
0.1
1
10
25
30
DRAIN-SOURCE VOLTAGE : -VDS (V)
DRAIN CURRENT : -ID (A)
TOTAL GATE CHARGE : Qg (nC)
Fig.7 Typical Capacitance vs. Drain-Source Voltage
Fig.8 Switching Characteristics
Fig.9 Dynamic Input Characteristics
Rev.A
3/4
SP8J5
Transistors
Measurement circuits
VGS
ID RL D.U.T.
VDS
VGS
10% 90% 90% 90% 10% td(off) toff tr
RG VDD
VDS
10% td(on) ton tr
Fig.10 Switching Time Test Circuit
Fig.11 Switching Time Waveforms
VG
VGS ID RL IG(Const.) D.U.T. RG VDD VDS
Qg VGS Qgs Qgd
Charge
Fig.12 Gate Charge Test Circuit
Fig.13 Gate Charge Waveform
Rev.A
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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